Nonballistic Spin-Field-Effect Transistor

John Schliemann, J. Carlos Egues, and Daniel Loss
Phys. Rev. Lett. 90, 146801 – Published 8 April 2003

Abstract

We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; these can be tuned to have equal strengths, leading to k-independent eigenspinors even in two dimensions. We discuss two-dimensional devices as well as quantum wires. In the latter, our setup presents strictly parabolic dispersions which avoids complications from anticrossings of different bands.

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  • Received 26 November 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.146801

©2003 American Physical Society

Authors & Affiliations

John Schliemann, J. Carlos Egues*, and Daniel Loss

  • Department of Physics and Astronomy, University of Basel, CH-4056 Basel, Switzerland

  • *Permanent address: Department of Physics and Informatics, University of São Paulo at São Carlos, 13560-970 São Carlos/SP, Brazil.

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Issue

Vol. 90, Iss. 14 — 11 April 2003

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