Relaxation and Dephasing of Multiexcitons in Semiconductor Quantum Dots

P. Borri, W. Langbein, S. Schneider, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg
Phys. Rev. Lett. 89, 187401 – Published 10 October 2002

Abstract

We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.

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  • Received 15 February 2002

DOI:https://doi.org/10.1103/PhysRevLett.89.187401

©2002 American Physical Society

Authors & Affiliations

P. Borri, W. Langbein, S. Schneider, and U. Woggon

  • Experimentelle Physik IIb, Universität Dortmund, Otto-Hahn Strasse 4, D-44221 Dortmund, Germany

R. L. Sellin, D. Ouyang, and D. Bimberg

  • Institut für Festkörperphysik TU, Hardenbergstrasse 36, D-10623 Berlin, Germany

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Issue

Vol. 89, Iss. 18 — 28 October 2002

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