Spin-Polarized Transport in Inhomogeneous Magnetic Semiconductors: Theory of Magnetic/Nonmagnetic <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi mathvariant="italic">p</mi><mi>−</mi><mi mathvariant="italic">n</mi></math></span> Junctions

Igor Žutić; Jaroslav Fabian; S. Das Sarma

doi:10.1103/PhysRevLett.88.066603

Spin-Polarized Transport in Inhomogeneous Magnetic Semiconductors: Theory of Magnetic/Nonmagnetic $p - n$ Junctions

Igor Žutić, Jaroslav Fabian, and S. Das Sarma

Phys. Rev. Lett. 88, 066603 – Published 29 January 2002

Abstract

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic $p - n$ junctions. Several phenomena with possible spintronic applications are predicted, including spin-voltaic effect, spin valve effect, exponential and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a $p - n$ junction, so that there is no spin injection (or extraction) at low bias.

Received 5 June 2001

DOI:https://doi.org/10.1103/PhysRevLett.88.066603

Authors & Affiliations

Igor Žutić¹, Jaroslav Fabian^1,2,*, and S. Das Sarma¹

¹Department of Physics, University of Maryland at College Park, College Park, Maryland 20742-4111
²Max-Planck Institute for the Physics of Complex Systems, D-01187 Dresden, Germany