Zero-Bias Anomaly in Disordered Wires

E. G. Mishchenko, A. V. Andreev, and L. I. Glazman
Phys. Rev. Lett. 87, 246801 – Published 19 November 2001
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Abstract

We calculate the low-energy tunneling density of states ν(ε,T) of an N-channel disordered wire, taking into account the electron-electron interaction nonperturbatively. The finite scattering rate 1/τ results in a crossover from the Luttinger liquid behavior at higher energies, νεα, to the exponential dependence ν(ε,T=0)exp(ε*/ε) at low energies, where ε*1/(Nτ). At finite temperature T, the tunneling density of states depends on the energy through the dimensionless variable ε/ε*T. At the Fermi level ν(ε=0,T)exp(ε*/T).

  • Received 16 June 2001

DOI:https://doi.org/10.1103/PhysRevLett.87.246801

©2001 American Physical Society

Authors & Affiliations

E. G. Mishchenko1,2,3, A. V. Andreev1,2, and L. I. Glazman4

  • 1Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
  • 2Department of Physics, University of Colorado, CB 390, Boulder, Colorado 80309-0390
  • 3L. D. Landau Institute for Theoretical Physics, Russian Academy of Sciences, Moscow 117334, Russia
  • 4Theoretical Physics Institute, University of Minnesota, Minneapolis, Minnesota 55455

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Issue

Vol. 87, Iss. 24 — 10 December 2001

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