Abstract
The carrier-concentration-driven superconductor-to-insulator (SI) transition as well as transport properties in underdoped twinned crystals is studied. The SI transition takes place at , carrier concentration , anisotropy , and the threshold resistivity which corresponds to a critical sheet resistance per bilayer. The evolution of a carrier, , is clearly observed in the underdoped region. The resistivity and Hall coefficient abruptly acquire strong temperature dependence at indicating a radical change in the electronic state.
- Received 30 November 1998
DOI:https://doi.org/10.1103/PhysRevLett.86.496
©2001 American Physical Society