Imaging of Friedel Oscillation Patterns of Two-Dimensionally Accumulated Electrons at Epitaxially Grown InAs(111) <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi mathvariant="italic">A</mi></math></span> Surfaces

K. Kanisawa; M. J. Butcher; H. Yamaguchi; Y. Hirayama

doi:10.1103/PhysRevLett.86.3384

Imaging of Friedel Oscillation Patterns of Two-Dimensionally Accumulated Electrons at Epitaxially Grown InAs(111) $A$ Surfaces

K. Kanisawa, M. J. Butcher, H. Yamaguchi, and Y. Hirayama

Phys. Rev. Lett. 86, 3384 – Published 9 April 2001

Abstract

The local density of states (LDOS) at the epitaxially grown InAs surface on a GaAs(111) $A$ substrate were characterized using low-temperature scanning tunneling microscopy. Using $d I / d V$ signal mapping, LDOS standing waves were clearly imaged at point defects and within nanostructures. Measurement of the wavelength as a function of bias voltage showed a nonparabolic dispersion relation for the conduction band. The observed wave features originate from the Friedel oscillations of the two-dimensional electron gas in the semiconductor surface accumulation layer.

Received 3 May 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.3384

Authors & Affiliations

K. Kanisawa¹, M. J. Butcher^1,2, H. Yamaguchi¹, and Y. Hirayama^1,3

¹NTT Basic Research Laboratories, 3-1 Wakamiya, Morinosato, Atsugi, Kanagawa 243-0198, Japan
²School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
³CREST-JST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012, Japan