Extreme Midinfrared Nonlinear Optics in Semiconductors

Alan H. Chin; Oscar G. Calderón; Junichiro Kono

doi:10.1103/PhysRevLett.86.3292

Extreme Midinfrared Nonlinear Optics in Semiconductors

Alan H. Chin, Oscar G. Calderón, and Junichiro Kono

Phys. Rev. Lett. 86, 3292 – Published 9 April 2001

Abstract

We have observed extreme nonlinear optical phenomena produced by intense midinfrared (MIR) pulses in semiconductors. These phenomena include multiple off-resonance optical sidebands (up to $\pm 3 MIR$ photons interacting with a near-infrared photon), multiple MIR harmonics (up to the seventh harmonic), and significant broadening and modification of MIR harmonic spectra. The generation of these extreme MIR nonlinear optical phenomena is primarily aided by cross-phase modulation.

Received 29 August 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.3292

Authors & Affiliations

Alan H. Chin^1,*, Oscar G. Calderón^1,†, and Junichiro Kono²

¹W. W. Hansen Experimental Physics Laboratory, Stanford University, Stanford, California 94305
²Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005

^*Present address: Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94551.
^†Permanent address: Departamento Optica, Universidad Complutense de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain.