Metal-Insulator Oscillations in a Two-Dimensional Electron-Hole System

R. J. Nicholas; K. Takashina; M. Lakrimi; B. Kardynal; S. Khym; N. J. Mason; D. M. Symons; D. K. Maude; J. C. Portal

doi:10.1103/PhysRevLett.85.2364

Metal-Insulator Oscillations in a Two-Dimensional Electron-Hole System

R. J. Nicholas, K. Takashina, M. Lakrimi, B. Kardynal, S. Khym, N. J. Mason, D. M. Symons, D. K. Maude, and J. C. Portal

Phys. Rev. Lett. 85, 2364 – Published 11 September 2000

Abstract

The electrical transport properties of a bipolar $InAs / GaSb$ system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum $e^{2} / h$ . The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.

Received 8 December 1999

DOI:https://doi.org/10.1103/PhysRevLett.85.2364

Authors & Affiliations

R. J. Nicholas, K. Takashina, M. Lakrimi, B. Kardynal, S. Khym, and N. J. Mason

Department of Physics, Oxford University, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom

D. M. Symons, D. K. Maude, and J. C. Portal

Grenoble High Magnetic Field Laboratory, Max Planck Institut für Festkörperforschung and Centre National de la Recherche Scientifique, B.P. 166, 38042 Grenoble, Cedex 9, France