Electronic Dephasing in the Quantum Hall Regime

N. A. Fromer; C. Schüller; D. S. Chemla; T. V. Shahbazyan; I. E. Perakis; K. Maranowski; A. C. Gossard

doi:10.1103/PhysRevLett.83.4646

Electronic Dephasing in the Quantum Hall Regime

N. A. Fromer, C. Schüller, D. S. Chemla, T. V. Shahbazyan, I. E. Perakis, K. Maranowski, and A. C. Gossard

Phys. Rev. Lett. 83, 4646 – Published 29 November 1999

Abstract

By means of degenerate four-wave mixing (FWM), we investigate the quantum coherence of electron-hole pairs in the presence of a two-dimensional electron gas in modulation-doped GaAs-AlGaAs quantum wells in the quantum Hall effect regime. With increasing magnetic field, we observe a crossover from Markovian to non-Markovian behavior, as well as large jumps in the decay time of the FWM signal at even Landau level filling factors. The main observations can be qualitatively reproduced by a model which takes into account scattering by the collective excitations of the two-dimensional electron gas.

Received 20 August 1999

DOI:https://doi.org/10.1103/PhysRevLett.83.4646

Authors & Affiliations

N. A. Fromer, C. Schüller^*, and D. S. Chemla

Department of Physics, University of California at Berkeley, Berkeley, California 94720
and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

T. V. Shahbazyan and I. E. Perakis