Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica

Peter E. Blöchl and James H. Stathis
Phys. Rev. Lett. 83, 372 – Published 12 July 1999
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Abstract

Hydrogen-related defects in oxygen-deficient silica, representing the material of a thermal gate oxide, are analyzed using first-principles calculations. Energetics and charge-state levels of oxygen vacancies, hydrogen, and their complexes in the silica framework are mapped out. The neutral hydrogen bridge, called E4 in quartz, is identified as the trap responsible for stress-induced leakage current, a forerunner of dielectric breakdown in metal-oxide–semiconductor devices.

  • Received 21 December 1998

DOI:https://doi.org/10.1103/PhysRevLett.83.372

©1999 American Physical Society

Authors & Affiliations

Peter E. Blöchl1 and James H. Stathis2

  • 1IBM Research, Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
  • 2IBM Research, T. J. Watson Research Center, Yorktown Heights, New York 10598

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Vol. 83, Iss. 2 — 12 July 1999

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