Abstract
We observe electron magnetism originating from fractional quantum Hall states in single-layered GaAs heterojunctions. This magnetization is entirely governed by electron-electron interaction effects. The studies were performed at temperatures between 0.3 and 7 K on gated high-mobility two-dimensional electron systems. We observe oscillations in the magnetic moment at various fractional filling factors, both for and , which persist up to 3.8 K. Most prominent features are found at filling factors , , , and . In addition, an intrinsic strongly asymmetric magnetization around is observed.
- Received 19 August 1998
DOI:https://doi.org/10.1103/PhysRevLett.82.819
©1999 American Physical Society