Carrier Density Collapse and Colossal Magnetoresistance in Doped Manganites

A. S. Alexandrov and A. M. Bratkovsky
Phys. Rev. Lett. 82, 141 – Published 4 January 1999
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Abstract

A novel ferromagnetic transition, accompanied by carrier density collapse, is found in doped charge-transfer insulators with strong electron-phonon coupling. The transition is driven by an exchange interaction of polaronic carriers with localized spins; the strength of the interaction determines whether the transition is first or second order. A giant drop in the number of current carriers during the transition, which is a consequence of bound pair formation in the paramagnetic phase close to the transition, is extremely sensitive to an external magnetic field. This carrier density collapse describes the resistivity peak and the colossal magnetoresistance of doped manganites.

  • Received 28 May 1998

DOI:https://doi.org/10.1103/PhysRevLett.82.141

©1999 American Physical Society

Authors & Affiliations

A. S. Alexandrov1,* and A. M. Bratkovsky2,†

  • 1Department of Physics, Loughborough University, Loughborough LE11 3TU, United Kingdom
  • 2Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, California 94304-1392

  • *Email address: asa21@cus.cam.ac.uk
  • Email address: alexb@hpl.hp.com

Comments & Replies

Comment on “Carrier Density Collapse and Colossal Magnetoresistance in Doped Manganites”

E. L. Nagaev
Phys. Rev. Lett. 84, 2042 (2000)

Alexandrov and Bratkovsky Reply:

A. S. Alexandrov and A. M. Bratkovsky
Phys. Rev. Lett. 84, 2043 (2000)

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Vol. 82, Iss. 1 — 4 January 1999

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