Band Anticrossing in GaInNAs Alloys

W. Shan, W. Walukiewicz, J. W. Ager, III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz
Phys. Rev. Lett. 82, 1221 – Published 8 February 1999
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Abstract

We present evidence for a strong interaction between the conduction band and a narrow resonant band formed by nitrogen states in Ga1xInxNyAs1y alloys. The interaction leads to a splitting of the conduction band into two subbands and a reduction of the fundamental band gap. An anticrossing of the extended states of the conduction band of the Ga1xInxAs matrix and the localized nitrogen resonant states is used to model the interaction. Optical transitions associated with the energy minima of the two subbands and the characteristic anticrossing behavior of the transitions under applied hydrostatic pressure have been unambiguously observed using photomodulation spectroscopy. The experimental results are in excellent quantitative agreement with the model.

  • Received 18 September 1998

DOI:https://doi.org/10.1103/PhysRevLett.82.1221

©1999 American Physical Society

Authors & Affiliations

W. Shan, W. Walukiewicz, and J. W. Ager, III

  • Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

E. E. Haller

  • Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720

J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz

  • National Renewable Energy Laboratory, Golden, Colorado 80401

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Issue

Vol. 82, Iss. 6 — 8 February 1999

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