Hannon et al. Reply:

J. B. Hannon, N. C. Bartelt, B. S. Swartzentruber, J. C. Hamilton, and G. L. Kellogg
Phys. Rev. Lett. 81, 5474 – Published 14 December 1998
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Abstract

A Reply to the Comment by J. P. Pelz et al.

  • Received 20 February 1998

DOI:https://doi.org/10.1103/PhysRevLett.81.5474

©1998 American Physical Society

Authors & Affiliations

J. B. Hannon, N. C. Bartelt, B. S. Swartzentruber, J. C. Hamilton, and G. L. Kellogg

  • Sandia National Laboratories Albuquerque, New Mexico 87185

Comments & Replies

Comment on “Step Faceting at the (001) Surface of Boron Doped Silicon”

J. P. Pelz, C. Ebner, D. E. Jones, Y. Hong, E. Bauer, and I. S. T. Tsong
Phys. Rev. Lett. 81, 5473 (1998)

Original Article

Step Faceting at the (001) Surface of Boron Doped Silicon

J. B. Hannon, N. C. Bartelt, B. S. Swartzentruber, J. C. Hamilton, and G. L. Kellogg
Phys. Rev. Lett. 79, 4226 (1997)

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Vol. 81, Iss. 24 — 14 December 1998

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