Comment on “Step Faceting at the (001) Surface of Boron Doped Silicon”

J. P. Pelz, C. Ebner, D. E. Jones, Y. Hong, E. Bauer, and I. S. T. Tsong
Phys. Rev. Lett. 81, 5473 – Published 14 December 1998
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Abstract

A Comment on the Letter by J. B. Hannon et al., Phys. Rev. Lett. 79, 4226 (1997). The authors of the Letter offer a Reply.

  • Received 29 December 1997

DOI:https://doi.org/10.1103/PhysRevLett.81.5473

©1998 American Physical Society

Authors & Affiliations

J. P. Pelz1, C. Ebner1, D. E. Jones1, Y. Hong2, E. Bauer2, and I. S. T. Tsong2

  • 1Department of Physics The Ohio State University Columbus, Ohio 43210
  • 2Department of Physics and Astronomy Arizona State University Tempe, Arizona 85287

Comments & Replies

Hannon et al. Reply:

J. B. Hannon, N. C. Bartelt, B. S. Swartzentruber, J. C. Hamilton, and G. L. Kellogg
Phys. Rev. Lett. 81, 5474 (1998)

Original Article

Step Faceting at the (001) Surface of Boron Doped Silicon

J. B. Hannon, N. C. Bartelt, B. S. Swartzentruber, J. C. Hamilton, and G. L. Kellogg
Phys. Rev. Lett. 79, 4226 (1997)

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Vol. 81, Iss. 24 — 14 December 1998

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