Etching of the Si(001) Surface with Molecular Oxygen

J. B. Hannon, M. C. Bartelt, N. C. Bartelt, and G. L. Kellogg
Phys. Rev. Lett. 81, 4676 – Published 23 November 1998
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Abstract

We have used low-energy electron microscopy to study the etching of large terraces on Si(001) with molecular oxygen. By imaging the etching process in situ, and comparing the results to detailed kinetic models, we determine and quantify the dominant mechanisms by which oxygen attacks the surface. We find that the etch rate follows an Arrhenius form with an activation energy of 2.0±0.4eV, significantly lower than estimates reported in modulated beam investigations.

  • Received 3 June 1998

DOI:https://doi.org/10.1103/PhysRevLett.81.4676

©1998 American Physical Society

Authors & Affiliations

J. B. Hannon1, M. C. Bartelt2, N. C. Bartelt2, and G. L. Kellogg1

  • 1Sandia National Laboratories, Albuquerque, New Mexico 87185
  • 2Sandia National Laboratories, Livermore, California 94551

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Vol. 81, Iss. 21 — 23 November 1998

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