Enhanced Nucleation and Enrichment of Strained-Alloy Quantum Dots

J. Tersoff
Phys. Rev. Lett. 81, 3183 – Published 12 October 1998
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Abstract

An epitaxial strained layer is metastable against nucleation of three-dimensional “islands.” For an alloy, I show that these islands nucleate at a substantially different composition than the alloy layer. This stress-induced segregation drastically increases the nucleation rate. For planar-layer electronic devices, these effects exacerbate the roughening problem. However, the same effects enhance the promise of “self-assembled quantum dots.” Possible “self-capping” of quantum dots is also discussed.

  • Received 28 May 1998

DOI:https://doi.org/10.1103/PhysRevLett.81.3183

©1998 American Physical Society

Authors & Affiliations

J. Tersoff

  • IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598

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Vol. 81, Iss. 15 — 12 October 1998

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