Abstract
Using valence band and Si core level photoelectron spectroscopy, it is shown that the short range order in amorphous silicon oxynitride is governed by the Mott rule. According to this rule, each Si atom is coordinated by four O and/or N atoms, each O atom (as in ) is coordinated by two Si atoms, and each N atom (as in ) is coordinated by three Si atoms. The nature of the removal of Si-Si bonds (hole traps) at the interface of by nitridation and the origin of Si-Si bond creation near the top surface of gate oxynitride in metal-oxide-semiconductor devices are understood for the first time by the Mott rule.
- Received 4 May 1998
DOI:https://doi.org/10.1103/PhysRevLett.81.1054
©1998 American Physical Society