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Light Emitting Micropatterns of Porous Si Created at Surface Defects

P. Schmuki, L. E. Erickson, and D. J. Lockwood
Phys. Rev. Lett. 80, 4060 – Published 4 May 1998
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Abstract

We report a principle that allows one to write visible light emitting silicon patterns of arbitrary shape down to the submicrometer scale. We demonstrate that porous Si growth can electrochemically be initiated preferentially at surface defects created in an n-type Si substrate by Si++ focused ion beam bombardment. For n-type material in the dark, the electrochemical pore formation potential (Schottky barrier breakdown voltage) is significantly lower at the implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve the selectivity of the pore formation process.

  • Received 12 January 1998

DOI:https://doi.org/10.1103/PhysRevLett.80.4060

©1998 American Physical Society

Authors & Affiliations

P. Schmuki1, L. E. Erickson2, and D. J. Lockwood2

  • 1Swiss Federal Institute of Technology (ETH/EPFL), Department of Materials Science, LC-DMX, CH-1015 Lausanne, Switzerland
  • 2Institute for Microstructural Sciences, National Research Council of Canada (NRC), Ottawa, Ontario, Canada K1A 0R6

See Also

Microscopic Graffiti

Phys. Rev. Focus 1, 12 (1998)

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Issue

Vol. 80, Iss. 18 — 4 May 1998

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