Kosterlitz-Thouless-Type Metal-Insulator Transition of a 2D Electron Gas in a Random Magnetic Field

X. C. Xie, X. R. Wang, and D. Z. Liu
Phys. Rev. Lett. 80, 3563 – Published 20 April 1998
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Abstract

We study the localization property of a two-dimensional noninteracting electron gas in the presence of a random magnetic field. The localization length is directly calculated using a transfer matrix technique and finite size scaling analysis. We show strong numerical evidence that the system undergoes a disorder-driven Kosterlitz-Thouless-type metal-insulator transition. We develop a mean field theory which maps the random field system into a two-dimensional XY model. The vortex and antivortex excitations in the XY model correspond to two different kinds of magnetic domains in the random field system.

  • Received 16 September 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.3563

©1998 American Physical Society

Authors & Affiliations

X. C. Xie

  • Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078

X. R. Wang

  • Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong

D. Z. Liu*

  • Department of Physics, University of California at San Diego, La Jolla, California 92093

  • *Current and Permanent address: Advanced Development Group, Viewlogic Systems, Inc., 1385 Del Norte Road, Camarillo, CA 93010.

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Vol. 80, Iss. 16 — 20 April 1998

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