Abstract
We report STM-induced desorption of H from at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at . The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H hole resonance. The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.
- Received 10 October 1997
DOI:https://doi.org/10.1103/PhysRevLett.80.2618
©1998 American Physical Society