Abstract
We present a model of ballistic electron emission microscopy (BEEM) that includes elastic scattering at nonepitaxial metal/semiconductor interfaces. In the weak scattering limit, the model reduces to the traditional description of BEEM. In the strong scattering limit, the model quantitatively describes (1) the relative magnitudes of BEEM currents into the , , and channels for ; (2) the relative magnitudes of the currents for and ; (3) the relative magnitudes of currents for and ; and (4) the absolute magnitudes of the currents for these materials.
- Received 7 May 1997
DOI:https://doi.org/10.1103/PhysRevLett.80.2433
©1998 American Physical Society