Exciton–LO-Phonon Quantum Kinetics: Evidence of Memory Effects in Bulk GaAs

L. Bányai, D. B. Tran Thoai, E. Reitsamer, H. Haug, D. Steinbach, M. U. Wehner, M. Wegener, T. Marschner, and W. Stolz
Phys. Rev. Lett. 75, 2188 – Published 11 September 1995; Erratum Phys. Rev. Lett. 75, 4335 (1995)
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Abstract

Oscillations of the transient four-wave-mixing signal with a period of about 100fs are observed in bulk GaAs using 14 fs pulses tuned to the exciton resonance at low temperatures. The measurements are explained in terms of the non-Markovian quantum kinetics for electron-hole pairs due to LO-phonon scattering. It is shown that the observed oscillations are evidence for memory effects. The experiments provide a first test of the central ideas of quantum kinetics, in which the effects of quantum coherence and of dissipation are intrinsically connected.

  • Received 4 April 1995

DOI:https://doi.org/10.1103/PhysRevLett.75.2188

©1995 American Physical Society

Erratum

Exciton-LO-Phonon Quantum Kinetics: Evidence of Memory Effects in Bulk GaAs

L. Bányai, D. B. Tran Thoai, E. Reitsamer, H. Haug, D. Steinbach, M. U. Wehner, M. Wegener, T. Marschner, and W. Stolz
Phys. Rev. Lett. 75, 4335 (1995)

Authors & Affiliations

L. Bányai, D. B. Tran Thoai, E. Reitsamer, and H. Haug

  • Institut für Theoretische Physik, J.W. Goethe Universität Frankfurt, Robert-Mayer-Strasse 8, D-60054 Frankfurt a.M., Germany

D. Steinbach, M. U. Wehner, and M. Wegener

  • Experimentelle Physik II, Universität Dortmund, Otto-Hahn-Strasse 4, D-44227 Dortmund, Germany

T. Marschner and W. Stolz

  • Wiss. Zentrum für Materialwissenschaften (WZMW) und Fachbereich Physik, Philipps-Universität Marburg, Hans-Meerwein-Strasse, D-35032 Marburg, Germany

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Vol. 75, Iss. 11 — 11 September 1995

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