Step Energies and Roughening of Strained Layers

J. Tersoff
Phys. Rev. Lett. 74, 4962 – Published 12 June 1995
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Abstract

A comment on the Letter by Y. H. Xie, et al., Phys. Rev. Lett. 73, 3006 (1994). The author so the Letter offer a Reply.

  • Received 3 February 1995

DOI:https://doi.org/10.1103/PhysRevLett.74.4962

©1995 American Physical Society

Authors & Affiliations

J. Tersoff

  • IBM, Thomas J. Watson Research CenterYorktown Heights, New York 10598

Comments & Replies

Xie et al. Reply:

Y. H. Xie, G. H. Gilmer, C. Roland, P. J. Silverman, S. K. Buratto, J. Y. Cheng, E. A. Fitzgerald, A. R. Kortan, S. Schuppler, M. A. Marcus, and P. H. Citrin
Phys. Rev. Lett. 74, 4963 (1995)

Original Article

Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain

Y. H. Xie, G. H. Gilmer, C. Roland, P. J. Silverman, S. K. Buratto, J. Y. Cheng, E. A. Fitzgerald, A. R. Kortan, S. Schuppler, M. A. Marcus, and P. H. Citrin
Phys. Rev. Lett. 73, 3006 (1994)

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Vol. 74, Iss. 24 — 12 June 1995

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