Antisite-Related Defects in GaAs Grown at Low Temperatures

Comparison of the properties of the arsenic-antisite-related defects inGaAs grown at low temperatures by molecular beam epitaxy with the propertiesof the well-known $\mathrm{EL}2\mathrm{}$ defect observed in Czochralski-grown GaAs shows some intriguing similarities and differences. We have used first-principles molecular dynamics calculations to identify and study a low-energy nearest-neighbor complex of an As antisite and an As interstitial which has many of the properties observed for the dominant arsenic-antisite-related complex in GaAs grown or annealed at 400 °C.