Temperature Dependence of the Electron Landé g Factor in GaAs

M. Oestreich and W. W. Rühle
Phys. Rev. Lett. 74, 2315 – Published 20 March 1995
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Abstract

The temperature dependent frequency of quantum beats of free electron Larmor precession in bulk GaAs yields the temperature variation from 5 to 200 K of the Landé g factor with high accuracy. The Landé g factor increases from 0.44 to 0.38 to 0.35 as the temperature increases from 5 to 100 to 150 K. The experimental results are in the opposite direction than prediction by k̇p theory manifesting the need for appreciable, temperature dependent corrections of this band model.

  • Received 1 August 1994

DOI:https://doi.org/10.1103/PhysRevLett.74.2315

©1995 American Physical Society

Authors & Affiliations

M. Oestreich and W. W. Rühle

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Federal Republic of Germany

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Vol. 74, Iss. 12 — 20 March 1995

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