Abstract
We have investigated the reaction of atomic hydrogen with defects at the (100) Si/ interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, and , are either passivated or produced by atomic hydrogen, depending on the starting density. However, the two defects possess quantitative differences in behavior. The center can be produced more readily than and it is also much harder to passivate by atomic hydrogen. These differences between and help to explain previous observations of center generation by radiation and by electrical stress.
- Received 10 November 1993
DOI:https://doi.org/10.1103/PhysRevLett.72.2745
©1994 American Physical Society