Free energies of generalized stacking faults in Si and implications for the brittle-ductile transition

Efthimios Kaxiras and Michael S. Duesbery
Phys. Rev. Lett. 70, 3752 – Published 14 June 1993
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Abstract

The generalized stacking fault energy and entropy have been calculated from first principles for two {111} planar cuts in Si separating widely spaced (shuffle plane) and narrowly spaced (glide plane) atomic layers. Energy considerations predict that the preferred fault is the shuffle plane. When the entropy is taken into account, it is found that for tensile stresses there is a critical temperature above which the preferred mode changes from shuffle to glide. We suggest that this change in preferred fault mode may be related to the brittle-ductile transition.

  • Received 30 November 1992

DOI:https://doi.org/10.1103/PhysRevLett.70.3752

©1993 American Physical Society

Authors & Affiliations

Efthimios Kaxiras

  • Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

Michael S. Duesbery

  • Fairfax Materials Research, Inc., 5613 Marble Arch Way, Alexandria, Virginia 22310

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Vol. 70, Iss. 24 — 14 June 1993

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