Abstract
The kinetics of photoinduced defect formation in high-purity silicas has been studied by femtosecond transient absorption spectroscopy in the visible and ultraviolet. Band edge two-photon excitation produces singlet excitons which decay in 0.25 ps into defects with the absorption spectra of nonbridging oxygen hole centers (≡Si-O⋅) and silicon E’ centers (≡Si⋅). We identify these defect pairs with the self-trapped triplet exciton and the 0.25 ps decay with the motion of the photoexcited oxygen atom. Similar results were obtained with both crystalline and amorphous silica samples.
- Received 20 January 1993
DOI:https://doi.org/10.1103/PhysRevLett.70.3588
©1993 American Physical Society