Breakdown of the semiclassical description of hot-electron dynamics in SiO2

E. A. Eklund, F. R. McFeely, and E. Cartier
Phys. Rev. Lett. 69, 1407 – Published 31 August 1992
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Abstract

Soft-x-ray photoemission measurements of the bulk Si 2p core level in Si/SiO2 overlayer structures show that hot-electron transport in SiO2 is essentially independent of temperature between 300 and 980 K. These results reveal a basic failure of the semiclassical Monte Carlo formalism to correctly model the strong electron-phonon interaction in SiO2 at electron energies >6 eV. The experimental data are shown to be consistent with the trends seen in quantum Monte Carlo transport calculations.

  • Received 18 June 1992

DOI:https://doi.org/10.1103/PhysRevLett.69.1407

©1992 American Physical Society

Authors & Affiliations

E. A. Eklund, F. R. McFeely, and E. Cartier

  • IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598

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Issue

Vol. 69, Iss. 9 — 31 August 1992

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