Superfluid-insulator transition in disordered boson systems

Werner Krauth, Nandini Trivedi, and David Ceperley
Phys. Rev. Lett. 67, 2307 – Published 21 October 1991
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Abstract

We present results of path-integral Monte Carlo simulations of bosons on a two-dimensional square lattice in a random potential of average strength V and with on-site repulsion U. We find that the superfluid density ρs is enhanced by increasing V and U in certain regions of parameter space. By combining the results of ρs, with the behavior of the density-density correlation function on lattices of size up to 10×10, we study the superfluid–to–Mott-insulator transition and the transition from a superfluid to a disorder-localized (‘‘Bose glass’’) phase.

  • Received 14 February 1991

DOI:https://doi.org/10.1103/PhysRevLett.67.2307

©1991 American Physical Society

Authors & Affiliations

Werner Krauth, Nandini Trivedi, and David Ceperley

  • National Center for Supercomputing Applications, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • Department of Physics, State University of New York, Stony Brook, New York 11794
  • Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439

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Issue

Vol. 67, Iss. 17 — 21 October 1991

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