Quantized current in a quantum-dot turnstile using oscillating tunnel barriers

L. P. Kouwenhoven, A. T. Johnson, N. C. van der Vaart, C. J. P. M. Harmans, and C. T. Foxon
Phys. Rev. Lett. 67, 1626 – Published 16 September 1991
PDFExport Citation

Abstract

We have observed a quantized current in a lateral quantum dot, defined by metal gates in the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. By modulating the tunnel barriers in the 2DEG with two phase-shifted rf signals, and employing the Coulomb blockade of electron tunneling, we produced quantized current plateaus in the current-voltage characteristics at integer multiples of ef, where f is the rf frequency. This demonstrates that an integer number of electrons pass through the quantum dot each rf cycle.

  • Received 20 May 1991

DOI:https://doi.org/10.1103/PhysRevLett.67.1626

©1991 American Physical Society

Authors & Affiliations

L. P. Kouwenhoven, A. T. Johnson, N. C. van der Vaart, and C. J. P. M. Harmans

  • Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600GA Delft, The Netherlands

C. T. Foxon

  • Philips Research Laboratories, Redhill, Surrey RH15HA, United Kingdom

References (Subscription Required)

Click to Expand
Issue

Vol. 67, Iss. 12 — 16 September 1991

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×