A new universality class for kinetic growth: One-dimensional molecular-beam epitaxy

S. Das Sarma and P. Tamborenea
Phys. Rev. Lett. 66, 325 – Published 21 January 1991
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Abstract

We study a new model for kinetic growth motivated by the physics of molecular-beam epitaxy where the deposited atoms can relax to kink sites maximizing the number of saturated bonds. The model is thus intermediate between the well-known random-deposition model with no relaxation and the random-deposition model with perfect relaxation, producing growth exponents which are in between these two extremes. In particular, the growth exponent β, defining the interface width Wtβ at intermediate times, is found to be β≊0.375±0.005 in d=1+1 dimensions. Our estimated α for this model is around 1.5 for 1+1 dimensions.

  • Received 30 July 1990

DOI:https://doi.org/10.1103/PhysRevLett.66.325

©1991 American Physical Society

Authors & Affiliations

S. Das Sarma and P. Tamborenea

  • Department of Physics, University of Maryland, College Park, Maryland 20742-4111

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Issue

Vol. 66, Iss. 3 — 21 January 1991

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