Abstract
The line shape of the bulk Si 2p core-level photoemission peak is found to be strongly dependent on the thickness of overlayers through which the electrons are transmitted. This effect is strongly energy dependent. We demonstrate that it arises from strong energy-dependent carrier relaxation in , and show how the effect may be used, in conjunction with Monte Carlo simulations, to extract energy-dependent scattering rates for electron-phonon and electron-electron scattering.
- Received 19 July 1990
DOI:https://doi.org/10.1103/PhysRevLett.65.1937
©1990 American Physical Society