Finite-temperature phase diagram of vicinal Si(100) surfaces

O. L. Alerhand, A. Nihat Berker, J. D. Joannopoulos, David Vanderbilt, R. J. Hamers, and J. E. Demuth
Phys. Rev. Lett. 64, 2406 – Published 14 May 1990
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Abstract

The phase diagram of vicinal Si(100) as a function of misorientation angle and temperature is calculated. Contrary to previous suggestions that only double-layer steps should appear on the equilibrium surface, it is predicted that the single-layer stepped surface is at equilibrium for small misorientation angles. This structure is stabilized by strain relaxation and by the thermal roughening of the steps. For annealed surfaces the critical angle at which the transition between the single- and double-layer stepped surface occurs is calculated to be θc≊2°.

  • Received 22 November 1989

DOI:https://doi.org/10.1103/PhysRevLett.64.2406

©1990 American Physical Society

Authors & Affiliations

O. L. Alerhand, A. Nihat Berker, J. D. Joannopoulos, and David Vanderbilt

  • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
  • Bellcore, Red Bank, New Jersey 07701
  • Department of Physics, Harvard University, Cambridge, Massachusetts 02138

R. J. Hamers and J. E. Demuth

  • IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Issue

Vol. 64, Iss. 20 — 14 May 1990

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