Piezoelectric properties of III-V semiconductors from first-principles linear-response theory

Stefano de Gironcoli, Stefano Baroni, and Raffaele Resta
Phys. Rev. Lett. 62, 2853 – Published 12 June 1989
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Abstract

We present a novel ab initio approach to piezoelectricity. The piezoelectric tensor is given by the stress induced by a homogeneous electric field. The perturbation is treated self-consistently by linear response, thus avoiding both supercells and numerical differentiation. We calculate the piezoelectric constants of none III-V semiconductors: as a by-product we also provide the first systematic study of zone-center phonons, internal strain parameters, effective charges, and dielectric constants. Our results agree very well with experiments where available, and allow predictions where they are not.

  • Received 7 November 1988

DOI:https://doi.org/10.1103/PhysRevLett.62.2853

©1989 American Physical Society

Authors & Affiliations

Stefano de Gironcoli

  • Dipartimento di Fisica Teorica, Università di Trieste, Strada Costiera 11, I-34104 Trieste, Italy

Stefano Baroni

  • Scuola Internazionale Superiore di Studi Avanzati (SISSA) Strada Costiera 11, I-34014 Trieste, Italy

Raffaele Resta

  • Institut Romand de Recherche Numérique en Physique des Matériaux (IRRMA), Ecole Polytechnique Fédérale de Lausanne, CH-1015, Lausanne, Switzerland

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Issue

Vol. 62, Iss. 24 — 12 June 1989

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