Detection of Heat Pulses by the Two-Dimensional Electron Gas in a Silicon Device

A. J. Kent; G. A. Hardy; P. Hawker; V. W. Rampton; M. I. Newton; P. A. Russell; L. J. Challis

doi:10.1103/PhysRevLett.61.180

Detection of Heat Pulses by the Two-Dimensional Electron Gas in a Silicon Device

A. J. Kent, G. A. Hardy, P. Hawker, V. W. Rampton, M. I. Newton, P. A. Russell, and L. J. Challis

Phys. Rev. Lett. 61, 180 – Published 11 July 1988

Abstract

A silicon metal-oxide semiconductor field-effect transistor has been used to detect heat pulses generated by electrical heating of a thin metal film. In the presence of a quantizing magnetic field deep oscillations in the detected intensity are observed, the signal being a maximum when the Fermi level coincides with a Landau level. The appearance of an intermediate signal at higher heater temperatures is attributed to cyclotron phonon absorption. We show that this system can be used as a tunable phonon spectrometer.