Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxial CaF2/Si(111) interface

J. L. Batstone, Julia M. Phillips, and E. C. Hunke
Phys. Rev. Lett. 60, 1394 – Published 4 April 1988; Erratum Phys. Rev. Lett. 61, 2973 (1988)
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Abstract

The atomic structure at the epitaxial CaF2/Si(111) interface has been determined by high-resolution electron microscopy. As-grown layers reveal only direct Ca-Si bonding at the interface, with eightfold coordinated Ca atoms. Fluorine is preferentially removed from the interface during a rapid thermal anneal leaving fivefold coordinated Ca atoms. Removal of F results in a dramatic improvement in the electrical properties of the interface. The measured interface state density is reduced from ≳1013 cm2 to ≲1011 cm2.

  • Received 30 November 1987

DOI:https://doi.org/10.1103/PhysRevLett.60.1394

©1988 American Physical Society

Erratum

Structural Characterization of the Si(111)-CaF2 Interface by High-Resolution Transmission Electron Microscopy

R. M. Tromp, F. K. LeGoues, W. Krakow, and L. J. Schowalter
Phys. Rev. Lett. 61, 2973 (1988)

Authors & Affiliations

J. L. Batstone, Julia M. Phillips, and E. C. Hunke

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

Comments & Replies

Structural Characterization of the Si(111)-CaF2 Interface by High-Resolution Transmission Electron Microscopy

R. M. Tromp, F. K. LeGoues, W. Krakow, and L. J. Schowalter
Phys. Rev. Lett. 61, 2274 (1988)

Batstone and Phillips Reply

J. L. Batstone and Julia M. Phillips
Phys. Rev. Lett. 61, 2275 (1988)

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Vol. 60, Iss. 14 — 4 April 1988

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