Observation of intrinsic bistability in resonant tunneling structures

V. J. Goldman, D. C. Tsui, and J. E. Cunningham
Phys. Rev. Lett. 58, 1256 – Published 23 March 1987
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Abstract

A simple quantum system, the semiconductor-based double-barrier resonant-tunneling structure, exhibits intrinsic bistability which we attribute to the feedback dependence of the energy of the electronic states in the well on the tunneling current density.

  • Received 15 December 1986

DOI:https://doi.org/10.1103/PhysRevLett.58.1256

©1987 American Physical Society

Authors & Affiliations

V. J. Goldman and D. C. Tsui

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544

J. E. Cunningham

  • AT&T Bell Laboratories, Holmdel, New Jersey 07733

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Vol. 58, Iss. 12 — 23 March 1987

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