New empirical model for the structural properties of silicon

J. Tersoff
Phys. Rev. Lett. 56, 632 – Published 10 February 1986
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Abstract

An empirical interatomic potential for covalent systems is proposed, incorporating bond order in an intuitive way. The potential has the form of a Morse pair potential, but with the bond-strength parameter depending upon local environment. A model for Si accurately describes bonding and geometry for may structures, including highly rebonded surfaces.

  • Received 21 October 1985

DOI:https://doi.org/10.1103/PhysRevLett.56.632

©1986 American Physical Society

Authors & Affiliations

J. Tersoff

  • IBM Thomas J.?tson Research Center, Yorktown Heights, New York 10598

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Issue

Vol. 56, Iss. 6 — 10 February 1986

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