Abstract
A thresholdlike behavior of the far-infrared photoconductivity due to cyclotron resonance and a drastic deviation of the cyclotron-resonance line shape from a Lorentzian has been observed in -GaAs at low temperatures by applying a high-power cw far-infrared laser. Both effects may consistently be explained in terms of generation-recombination-induced nonequilibrium phase transitions showing that, besides impact ionization of impurities, cyclotron resonance can critically control the conductivity of the semiconductors.
- Received 4 June 1985
DOI:https://doi.org/10.1103/PhysRevLett.55.754
©1985 American Physical Society