Strong Electric Field Heating of Conduction-Band Electrons in Si<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span>

T. N. Theis; D. J. DiMaria; J. R. Kirtley; D. W. Dong

doi:10.1103/PhysRevLett.52.1445

Strong Electric Field Heating of Conduction-Band Electrons in Si $O_{2}$

T. N. Theis, D. J. DiMaria, J. R. Kirtley, and D. W. Dong

Phys. Rev. Lett. 52, 1445 – Published 16 April 1984

Abstract

We demonstrate that average conduction-band electrons in a wide-band-gap insulator, Si $O_{2}$ , are heated several electronvolts above the conduction-band edge at fields of 5 to 12 MV/cm. The electronic energy distribution appears to be stabilized at these high fields by energy-loss mechanisms other than LO-phonon scattering.