Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1x)yMo6S8 under High Pressure

D. W. Harrison, K. C. Lim, J. D. Thompson, C. Y. Huang, P. D. Hambourger, and H. L. Luo
Phys. Rev. Lett. 46, 280 – Published 26 January 1981
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Abstract

Pressure-induced high-temperature superconductivity is observed in semiconducting (SnxEu1x)yMo6S8, where 0<~x<~0.1 and y=1.0 and 1.2, having a carrier concentration ≃1019/cm3 at 4.2 K as determined from Hall-effect measurements. Above a threshold pressure ≃7 kbar, superconductivity appears with dTcdP2 K/kbar. The maximum superconducting temperature (Tc10 K), reached at ∼ 12 kbar, represents the highest pressure-induced Tc in any semiconductor. For P>~13 kbar, the temperature-dependent resistance appears metallic.

  • Received 9 September 1980

DOI:https://doi.org/10.1103/PhysRevLett.46.280

©1981 American Physical Society

Authors & Affiliations

D. W. Harrison, K. C. Lim, J. D. Thompson, and C. Y. Huang

  • Los Alamos Scientific Laboratory, Los Alamos, New Mexico 87545

P. D. Hambourger

  • Cleveland State University, Cleveland, Ohio 44115

H. L. Luo

  • University of California, San Diego, La Jolla, California 92093

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Issue

Vol. 46, Iss. 4 — 26 January 1981

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