Observation of Velocity Bunching of Near-Zone-Edge Phonons in Semiconductors: An Intense, Tunable Phonon Source near 10 ÅA

P. Hu, V. Narayanamurti, and M. A. Chin
Phys. Rev. Lett. 46, 192 – Published 19 January 1981
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Abstract

Experiments are reported on velocity bunching of near-zone-edge phonon pulses generated in the interband energy-relaxation process of photoexcited electron-hole pairs in GaAs and InP. The bunching is achieved by scanning the photoexcited region along the direction of phonon propagation at various velocities corresponding to different dispersive points on the phonon branch. This intense, tunable phonon source can be operated in the 10-ÅA wavelength region.

  • Received 3 October 1980

DOI:https://doi.org/10.1103/PhysRevLett.46.192

©1981 American Physical Society

Authors & Affiliations

P. Hu, V. Narayanamurti, and M. A. Chin

  • Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 46, Iss. 3 — 19 January 1981

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