Many-Particle Effects in the Optical Excitations of a Semiconductor

W. Hanke and L. J. Sham
Phys. Rev. Lett. 43, 387 – Published 30 July 1979
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Abstract

We present (a) a general formulation of the electron-hole interaction which takes into account both screened electron-hole attraction and its exchange counterpart, giving rise to the excitonic and local-field effects, respectively; (b) a quantitative calculation of absorption and modulation spectrum in Si, which demonstrates the dominant role played by the continuum-exciton effect on the main optical absorption of a covalent semiconductor; and (c) a model analysis of the continuum-excitonic effect on the optical excitations of semiconductors in general.

  • Received 5 February 1979

DOI:https://doi.org/10.1103/PhysRevLett.43.387

©1979 American Physical Society

Authors & Affiliations

W. Hanke and L. J. Sham*

  • Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80, West Germany

  • *On leave of absence from the University of California, San Diego, La Jolla, Cal. 92093.

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Vol. 43, Iss. 5 — 30 July 1979

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