Direct Observation of Phonons Generated During Nonradiative Capture in GaAs pn Junctions

V. Narayanamurti, R. A. Logan, and M. A. Chin
Phys. Rev. Lett. 40, 63 – Published 2 January 1978
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Abstract

Phonon generation by GaAs epilayers and pn junctions is studied by means of a superconducting bolometer and time-of-flight techniques. The polarization of the emitted radiation is found to be sensitive to doping in agreement with theoretical selection rules. The relative strength of the radiative and nonradiative processes is shown to depend on defect density and bias and demonstrates the energy transfer processes in pn junctions.

  • Received 7 September 1977

DOI:https://doi.org/10.1103/PhysRevLett.40.63

©1978 American Physical Society

Authors & Affiliations

V. Narayanamurti, R. A. Logan, and M. A. Chin

  • Bell Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 40, Iss. 1 — 2 January 1978

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