Abstract
We report the observation of Shubnikov-de Haas oscillations in the conductivity of surface holes in a -type inversion layer of Si. The hole plasma is shown to be two dimensional. The effective mass varies from about to in the carrier concentration range (1 to 3.5) × . It is proposed that the nonparabolic nature of Si valence band as well as many-body interaction affects the value of the effective mass. The hole gas is found to exist in one valley. Unexpected oscillations in the conductivity at low carrier concentration (less than 8 × ) are reported.
- Received 31 December 1973
DOI:https://doi.org/10.1103/PhysRevLett.32.1003
©1974 American Physical Society