Numerically Exact Simulation of Photodoped Mott Insulators

Fabian Künzel, André Erpenbeck, Daniel Werner, Enrico Arrigoni, Emanuel Gull, Guy Cohen, and Martin Eckstein
Phys. Rev. Lett. 132, 176501 – Published 23 April 2024

Abstract

A description of long-lived photodoped states in Mott insulators is challenging, as it needs to address exponentially separated timescales. We demonstrate how properties of such states can be computed using numerically exact steady state techniques, in particular, the quantum Monte Carlo algorithm, by using a time-local ansatz for the distribution function with separate Fermi functions for the electron and hole quasiparticles. The simulations show that the Mott gap remains robust to large photodoping, and the photodoped state has hole and electron quasiparticles with strongly renormalized properties.

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  • Received 23 November 2023
  • Accepted 20 March 2024

DOI:https://doi.org/10.1103/PhysRevLett.132.176501

© 2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Fabian Künzel1, André Erpenbeck2, Daniel Werner3, Enrico Arrigoni3, Emanuel Gull2, Guy Cohen4,5, and Martin Eckstein1,6

  • 1Institute of Theoretical Physics, University of Hamburg, 20355 Hamburg, Germany
  • 2Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
  • 3Institute of Theoretical and Computational Physics, Graz University of Technology, 8010 Graz, Austria
  • 4The Raymond and Beverley Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
  • 5School of Chemistry, Tel Aviv University, Tel Aviv 6997801, Israel
  • 6The Hamburg Centre for Ultrafast Imaging, Hamburg, Germany

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Issue

Vol. 132, Iss. 17 — 26 April 2024

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