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Acoustically Induced Giant Synthetic Hall Voltages in Graphene

Pai Zhao, Chithra H. Sharma, Renrong Liang, Christian Glasenapp, Lev Mourokh, Vadim M. Kovalev, Patrick Huber, Marta Prada, Lars Tiemann, and Robert H. Blick
Phys. Rev. Lett. 128, 256601 – Published 21 June 2022; Erratum Phys. Rev. Lett. 129, 109901 (2022)
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Abstract

Any departure from graphene’s flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. Here, we demonstrate the tunability of strong gauge fields in nonlocal experiments using a large planar graphene sheet that conforms to the deformation of a piezoelectric layer by a surface acoustic wave. The acoustic wave induces a longitudinal and a giant synthetic Hall voltage in the absence of external magnetic fields. The superposition of a synthetic Hall potential and a conventional Hall voltage can annihilate the sample’s transverse potential at large external magnetic fields. Surface acoustic waves thus provide a promising and facile avenue for the exploitation of gauge fields in large planar graphene systems.

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  • Received 21 December 2021
  • Revised 8 April 2022
  • Accepted 25 May 2022

DOI:https://doi.org/10.1103/PhysRevLett.128.256601

© 2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Erratum

Erratum: Acoustically Induced Giant Synthetic Hall Voltages in Graphene [Phys. Rev. Lett. 128, 256601 (2022)]

Pai Zhao, Chithra H. Sharma, Renrong Liang, Christian Glasenapp, Lev Mourokh, Vadim M. Kovalev, Patrick Huber, Marta Prada, Lars Tiemann, and Robert H. Blick
Phys. Rev. Lett. 129, 109901 (2022)

Authors & Affiliations

Pai Zhao1, Chithra H. Sharma1, Renrong Liang2,†, Christian Glasenapp1, Lev Mourokh3,‡, Vadim M. Kovalev4,5,§, Patrick Huber1,6, Marta Prada7, Lars Tiemann1,*, and Robert H. Blick1

  • 1Center for Hybrid Nanostructures, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany
  • 2School of Integrated Circuits, Tsinghua University, 100084 Beijing, China
  • 3Department of Physics, Queens College of the City University of New York, Flushing, New York 11367, USA
  • 4A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia
  • 5Novosibirsk State Technical University, Novosibirsk 630073, Russia
  • 6Institute of Materials and X-Ray Physics, Hamburg University of Technology, 21073 Hamburg, Germany
  • 7Institute for Theoretical Physics, Universität Hamburg HARBOR, Building 610 Luruper Chaussee 149, 22761 Hamburg, Germany

  • *Corresponding author. latieman@physnet.uni-hamburg.de
  • liangrr@mail.tsinghua.edu.cn
  • Lev.Murokh@qc.cuny.edu
  • §vmk111@yandex.ru

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Issue

Vol. 128, Iss. 25 — 24 June 2022

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