Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus

Shenyang Huang, Yang Lu, Fanjie Wang, Yuchen Lei, Chaoyu Song, Jiasheng Zhang, Qiaoxia Xing, Chong Wang, Yuangang Xie, Lei Mu, Guowei Zhang, Hao Yan, Bin Chen, and Hugen Yan
Phys. Rev. Lett. 127, 186401 – Published 26 October 2021
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Abstract

Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under 1.8GPa, the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.

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  • Received 29 March 2021
  • Accepted 21 September 2021

DOI:https://doi.org/10.1103/PhysRevLett.127.186401

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shenyang Huang1,*, Yang Lu2,*,†, Fanjie Wang1, Yuchen Lei1, Chaoyu Song1, Jiasheng Zhang1, Qiaoxia Xing1, Chong Wang1, Yuangang Xie1, Lei Mu1, Guowei Zhang3, Hao Yan4, Bin Chen2, and Hugen Yan1,5,‡

  • 1State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
  • 2Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
  • 3Institute of Flexible Electronics, Northwestern Polytechnical University, Xi’an 710072, China
  • 4CAS Key Laboratory of Experimental Study under Deep-sea Extreme Conditions, Institute of Deep-Sea Science and Engineering, Chinese Academy of Sciences, Sanya 572000, China
  • 5Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China

  • *These authors contributed equally to this work.
  • yang.lu@hpstar.ac.cn
  • hgyan@fudan.edu.cn

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Issue

Vol. 127, Iss. 18 — 29 October 2021

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